Tantalum Carbide (TaC) Powder (Nanopowder and submicrons)
Tungsten Silicide (WSi₂) powder is widely used in semiconductor manufacturing, MEMS, thin-film coatings, and high-temperature heating elements. It forms a stable silicon dioxide (SiO₂) layer when exposed to oxygen, enhancing long-term performance in harsh environments. Our WSi₂ powder is engineered with high chemical purity (>99.5%), controlled particle size distribution (micron or nanoscale), and consistent phase composition, making it suitable for both R&D and industrial-scale applications.
Princeton Powder is a leading supplier of Tungsten Silicide refractory ceramic powder. Tungsten powders including Tungsten Carbide WC Powder, Tungsten Boride Powder, and Tungsten Rhenium Alloy Powder are for sale in bulk.
Tungsten Disilicide WSi2 Powder
Formula | WSi2 |
Synonyms | Tungsten Disilicide, CAS: 12039-88-2 |
Appearance | Black Powder |
Particle Size | 1-10 um, 45-105 um, can be customized upon request |
Melting Point | 2160°C |
Density | 9.30 g/cm 3 |
Purity | 99.5% – 99.9% |
CAS Number | 12039-88-2 |
Description of Tungsten Disilicide Powder
Tungsten Disilicide Powder (WSi2) is a fine, gray refractory metallic-ceramic powder known for its excellent electrical conductivity, high melting point (~2160°C), and exceptional oxidation resistance. It has a high melting point and excellent thermal stability, making it suitable for high-temperature applications.
Tungsten Disilicide Powder Should be handled with care to avoid inhalation or ingestion. Protective equipment such as gloves, masks, and goggles should be used. It needs to be stored in a cool, dry place to prevent oxidation or degradation over time.
Princeton Powder is a leading supplier of Tungsten Disilicide Powder powder. It is for sale at a competitive price.
Tungsten Disilicide Powder Chemical Composition
Product | Purity (%) | Particle Size (D50) | Chemical Composition (%) | |||
O | N | C | Si | |||
WSi2-1 | >99.5 | 1-3μm | ≤0.8 | ≤0.1 | ≤0.1 | 22.3-23.5 |
WSi2-2 | >99.9 | -325mesh | ≤0.5 | ≤0.05 | ≤0.1 | 22.3-23.5 |
Note | Particle sizes can be customized | |||||
Tungsten Disilicide Powder Applications
Semiconductors (CMOS, MOSFET gates, interconnect layers)
Thin Film Deposition (PVD, CVD for barrier layers)
MEMS Devices and microheaters
High-Temperature Heating Elements
Oxidation-Resistant Coatings for aerospace & energy
Tungsten DisilicidePowder Reference
Room-temperature synthesis of tungsten silicide powders using various initial systems
- The present study investigated the synthesis of tungsten silicide powders using ternary (WO3-Si-Mg and W-SiO2-Mg) and binary (W-Si) initial systems at room temperature via mechanochemical synthesis (MCS) and mechanical alloying (MA) processes.
Tungsten Disilicide Powder FAQ
What are the key properties of WSi₂?
Tungsten Silicide offers:
High melting point (~2160°C)
Low electrical resistivity (~60–80 µΩ·cm)
Excellent oxidation resistance (forms protective SiO₂ layer)
Stable tetragonal crystal structure
Good thermal shock resistance
What particle sizes are available for WSi₂ powder?
Micron-sized powders (1–5 µm standard)
Submicron or nano-scale powders available upon request
Custom sieving or milling can also be arranged depending on your process requirements.
Can WSi₂ be used in CVD or PVD processes?
Absolutely. WSi₂ powder can be used as a target or precursor material in physical vapor deposition (PVD) and chemical vapor deposition (CVD) for producing thin films and coatings.