Hafnium Carbide Sputtering Targets (For HfC Thin Films Coating)
Hafnium carbide (HfC) is a chemical compound of hafnium and carbon.It is a refractory carbide with a melting point of about 3900°C. Hafnium carbide sputtering targets are manufactured using powder metallurgy techniques. High-purity hafnium carbide powder is combined with a binder material, then pressed into the desired shape and size. The target is subsequently sintered at high temperatures to achieve a solid, dense, and uniform structure. Hafnium Carbide Sputtering Targets is widely used as the raw material for hafnium carbide thin films coating/deposition.
Hafnium products including Hafnium Carbide (HfC) Powder, Hafnium Nitride Powder, Hafnium Boride powder, and Hafnium Disilicide Powder are for sale at a competitive price.
Material | Hafnium Carbide (HfC) Sputtering Targets |
CAS Number | 12069-85-1 |
Purity | 99.9% |
Shape | Discs, Plates, Column Targets, Step Targets, Custom-made |
| Density | 12.2 g/cm3 |
Melting Point | 3900 ℃ |
Dimensions | Dia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″ Customized |
Bonding | With/No Bonding, or customized |
Backing Material | Molybdenum Or Copper |
Description of Hafnium Carbide Sputtering Targets
Hafnium Carbide (HfC) sputtering targets are produced through advanced powder metallurgy, using high-purity hafnium carbide powder compacted and sintered to achieve a dense, uniform material suitable for thin film deposition. During the sputtering process, ions from a plasma source strike the HfC target, ejecting hafnium and carbon atoms that deposit onto a substrate, forming a thin, protective coating. These coatings are highly resistant to wear, corrosion, and high temperatures, making HfC sputtering targets ideal for applications in semiconductor devices, aerospace components, and high-performance optics. Downstream products from HfC sputtering include advanced microelectronics, thermal barrier coatings, and protective coatings for tools and engine parts, enhancing durability and performance in extreme environments.
Dimensions of Hafnium Carbide Sputtering Targets
Circular Sputtering Targets | Diameter | 1.0” 2.0” 3.0” 4.0” 5.0” 6.0” Customized |
Rectangular Sputtering Targets | Width x Length | 5” x 12” 5” x 15” 5” x 20” 5” x 22” 6” x 20” Customized |
Thickness can be customized (With/No Bonding) | 0.125”, 0.25”, Customized | |
Hafnium Carbide Sputtering Targets Application
Semiconductor and Microelectronics: HfC coatings are used as diffusion barriers and gate materials in microchips, enhancing device performance and lifespan by providing excellent resistance to thermal and chemical degradation.
Aerospace and Defense: Due to its high melting point and oxidation resistance, HfC is ideal for thermal protection coatings in rocket nozzles, hypersonic vehicle components, and other aerospace parts exposed to extreme temperatures and corrosive environments.
Optical Coatings: HfC thin films are applied on optical components to create protective, anti-reflective, and infrared-resistant layers, which are crucial for sensors, lenses, and windows in high-temperature or corrosive settings.
Cutting Tools and Industrial Equipment: In machining and manufacturing, HfC coatings extend the life of cutting tools and dies by providing an exceptionally hard and wear-resistant surface, reducing the need for frequent replacements and increasing operational efficiency.
Key factors for selecting Hafnium Carbide (HfC) sputtering targets
Purity: High-purity HfC ensures minimal contaminants in the coating, enhancing performance in sensitive applications like microelectronics and optics.
Density: Higher density targets provide consistent deposition rates and improve film uniformity.
Grain Size: Fine, uniform grain size contributes to smoother coatings and stable sputtering performance.
- Target Size and Shape: Custom sizes and shapes accommodate specific equipment requirements, maximizing coating efficiency.
Hafnium Carbide Sputtering Targets Scholar Articles
Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target
Hafnium nitride (HfN) thin films were prepared on Si (100) substrates by radio frequency magnetron sputtering with a compound target. Nitrogen composition, work function and electrical resistivity were investigated to evaluate thin film properties. Nitrogen composition and work function had little dependence on argon gas pressure and radio frequency power. Electrical resistivity showed strong correlation with the substrate temperature. When thin films were fabricated at room temperature, the electrical resistivity was 100 μΩ cm, and it became lower with an increase in the substrate temperature. When the films were fabricated at 600 °C, the resistivity became less than 50 μΩ cm.