Hafnium Disulfide Powder HfS2
Hafnium disulfide powder is a multifunctional material with significant applications in electronics, optoelectronics, sensing technologies, and energy storage. Its unique layered structure and favorable semiconductor properties make it particularly valuable for advanced electronic components and efficient sensors. The production methods and key parameters are optimized to meet the specific needs of each application, ensuring high performance and reliability, which are essential for the development of next-generation devices and technologies.
Princeton Powder is a major manufacturer of high-purity Hafnium disulfide powder. Hafnium powders including Hafnium Carbide Powder, Hafnium Nitride Powder, Hafnium Boride powder, Hafnium Disilicide HfSi2 Powder and Hafnium oxide powder are for sale at a competitive price.
Formula | Hafnium Disulfide, HfS2 |
CAS Number | 18855-94-2 |
Purity | 99.9% min |
Synonyms | Hafnium Disulfide powder, Hafnium Disulfide refractory powder, Hafnium Disulfide thermal spray powder, HfS2 Powder |
Particle Sizes | -325 mesh or be customized |
Shape | Spherical or irregular |
Melting Point | N/A |
Appearance | Brown solid |
Density | 6.03 g/cm 3 |
Description of Hafnium Disulfide Powder
Hafnium disulfide (HfS₂) powder is a compound composed of hafnium (Hf) and sulfur (S), represented by the chemical formula HfS₂. This material is recognized for its layered structure and semiconductor properties, making it valuable in various electronic and optoelectronic applications.
Manufacturing method of Hafnium Disulfide Powder
Solid-State Reaction: HfS₂ can be synthesized by reacting hafnium metal with sulfur at elevated temperatures (typically around 800°C to 1,000°C) in an inert atmosphere, resulting in the formation of crystalline HfS₂.
Chemical Vapor Deposition (CVD): In CVD, gaseous precursors containing hafnium and sulfur are introduced into a high-temperature reactor, where they decompose to deposit HfS₂ as a thin film or powder. This method is favored for its ability to produce high-purity materials with uniform thickness.
Hydrothermal Synthesis: This technique involves dissolving hafnium salts and sulfur sources in a solution, subjecting them to high temperatures and pressures in a sealed environment to yield nanoscale HfS₂ with controlled morphology.
Mechanical Milling: Hafnium disulfide powder can also be produced by grinding bulk HfS₂ into fine particles using high-energy ball milling, allowing for precise control over particle size and distribution.
Key Parameters of Hafnium Disulfide Powder
Application of Hafnium Disulfide Powder
Semiconductor Devices: HfS₂ is used in field-effect transistors (FETs) and other electronic components due to its favorable electronic properties. The powder is often processed into thin films using CVD or other deposition techniques for device fabrication.
Optoelectronic Devices: Due to its semiconductor characteristics, HfS₂ is employed in optoelectronic devices such as photodetectors and light-emitting diodes (LEDs). The powder can be incorporated into device structures through various thin-film deposition methods.
Sensors: Hafnium disulfide is utilized in gas sensors and environmental monitoring applications, benefiting from its sensitivity to various gases. The powder is typically used to fabricate sensor films that respond to specific analytes.
Catalysts: HfS₂ exhibits catalytic properties in certain chemical reactions, particularly in the hydrogenation process. It can be processed into catalyst pellets or coatings for enhanced reaction efficiency in chemical reactors.
Energy Storage: The layered structure of HfS₂ allows for ion intercalation, making it a potential material for use in batteries and supercapacitors. The powder is often engineered into thin films or composites to improve energy storage performance.
Hafnium Disulfide Powder Scholar Articles
Oxidation effect in octahedral hafnium disulfide thin film
Abstract: Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions.